Exciton binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures grown with built-in piezoelectric field

P. BIGENWALD; P. BORING; K. J. MOORE; B. GIL; K. WOODBRIDGE (1994). Exciton binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures grown with built-in piezoelectric field. Le Journal de Physique IV, 04(C2), C2-215-C2-223. https://doi.org/10.1051/jp4:1994228